mw. dr. K. (Katerina Dohnalova) Dohnalová
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Faculteit der Natuurwetenschappen, Wiskunde en Informatica
Van der Waals-Zeeman Instituut
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POSTBUS
94485
1090 GL Amsterdam
Kamernummer: C4.245
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k.dohnalova@uva.nl
T: 0205255793
2014
- A.N. Poddubny & K. Dohnalová (2014). Direct bandgap silicon quantum dots achieved via electronegative capping. Physical Review B, 90 (24), 245439. doi: 10.1103/PhysRevB.90.245439[go to publisher's site]
- K. Dohnalová, T. Gregorkiewicz & K. Kůsová (2014). Silicon quantum dots: surface matters. Journal of Physics-Condensed Matter, 26 (17), 173201. doi: 10.1088/0953-8984/26/17/173201
- S. Saeed, F. Buters, K. Dohnalova, L. Wosinski & T. Gregorkiewicz (2014). Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition. Nanotechnology, 25 (40), 405705:. doi: 10.1088/0957-4484/25/40/405705
- S. Saeed, E.M.L.D. de Jong, K. Dohnalova & T. Gregorkiewicz (2014). Efficient optical extraction of hot-carrier energy. Nature Communications, 5, 4665. doi: 10.1038/ncomms5665[go to publisher's site]
2013
- V. Svreck, K. Dohnalova, D. Mariotti, M.T. Trinh, R. Limpens, S. Mitra, T. Gregorkiewicz, K. Matsubara & M. Kond (2013). Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum. Advanced Functional Materials, 23 (48), 6051-6058. doi: 10.1002/adfm.201301468
- K. Dohnalova, S. Saeed, A. N. Poddubny, A.A. Prokofiev & T. Gregorkiewicz (2013). Thermally activated emission from direct bandgap-like silicon quantum dots. ECS J.Solid State Science Technology, 2 (6), R97-R99. doi: 10.1149/2.004306jss
- K. Dohnalová, A. N. Poddubny, A.A. Prokofiev, W.D.A.M. de Boer, C.P. Umesh, J.M.J. Paulusse, H. Zuilhof & T. Gregorkiewicz (2013). Surface brightens-up Si quantum dots: direct bandgap-like size-tunable emission. Light: Science & Applications, 2, e47. doi: 10.1038/lsa.2013.3[go to publisher's site]
- I. Doğan, N.J. Kramer, R.H.J. Westermann, K. Dohnalová, A.H.M. Smets, M.A. Verheijen, T. Gregorkiewicz & M.C.M. Sanden (2013). Ultrahigh throughput plasma processing of free standing silicon nanocrystals with lognormal size distribution. Journal of Applied Physics, 113 (13), 134306. doi: 10.1063/1.4799402[go to publisher's site]
2012
- K. Dohnalová, A. Fučiková, C.P. Umesh, J. Humpoličková, J.M.J. Paulusse, J. Valenta, H. Zuilhof, M. Hof & T. Gregorkiewicz (2012). Microscopic origin of the fast blue-green luminescence of chemically synthesized non-oxidized silicon quantum dots. Small, 8 (20), 3185-3191. doi: 10.1002/smll.201200477
2011
- N.N. Ha, S. Cueff, K. Dohnalová, M.T. Trinh, R. Rizk, C. Labbé, I.N. Yassievich & T. Gregorkiewicz (2011). Photon cutting for excitation Er3+ions in SiO2 sensitized by Si qunatum dots. Physical Review B, 84 (24). doi: 10.1103/PhysRevB.84.241308
- N.N. Ha, K. Dohnalová & T. Gregorkiewicz (2011). Evaluation of free carrier losses to 1.54 mu m emission in Si/Si: Er nanolayers on SOI substrate for optical gain observation. Optical Materials, 33 (7), 1094-1096. doi: 10.1016/j.optmat.2010.08.025
- D. Timmerman, J. Valenta, K. Dohnalová, W.D.A.M. de Boer & T. Gregorkiewicz (2011). Step-like enhancement of luminescence quantum yield of silicon nanocrystals. Nature Nanotechnology, 6, 710-713. doi: 10.1038/nnano.2011.167
- Y. Wang, K. Liu, X. Liu, K. Dohnalová, T. Gregorkiewicz, X. Kong, M.C.G. Aalders, W.J. Buma & H. Zhang (2011). Critical shell thickness of core/shell upconversion luminescence nanoplatform for FRET application. The Journal of Physical Chemistry Letters, 2 (17), 2083-2088. doi: 10.1021/jz200922f
2010
- N.N. Ha, K. Dohnalová, T. Gregorkiewicz & J. Valenta (2010). Upper limit of optical gain in MBE-grown Si:Er. Physical Review B, B (81), 195206: 1-6-239902:1.
- W.D.A.M. de Boer, D. Timmerman, K. Dohnalová, I.N. Yassievich, H. Zhang, W.J. Buma & T. Gregorkiewicz (2010). Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals. Nature Nanotechnology, 5 (12), 878-884. doi: 10.1038/NNANO.2010.236
- N.N. Ha, K. Dohnalová, T. Gregorkiewicz & J. Valenta (2010). Publisher's note: Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers [Phys. Rev. B 81, 195206 (2010)]. Physical Review B, 81 (23), 239902(E). doi: 10.1103/PhysRevB.81.239902
- N.N. Ha, K. Dohnalová, T. Gregorkiewicz & J. Valenta (2010). Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers. Physical Review B, 81 (19), 195206-195206. doi: 10.1103/PhysRevB.81.195206[go to publisher's site]
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